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MMBT4403T
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
NEW PRODUCT
* * *
Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401T) Ultra-Small Surface Mount Package
SOT-523 Dim
A C TOP VIEW B G H K N M E BC
Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0
Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4
A B C D G H J K L
D L
Mechanical Data
* * * * * * * * Case: SOT-523, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 2T Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.)
J
M N a
C
All Dimensions in mm
B
E
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT4403T -40 -40 -5.0 -600 150 833 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30273 Rev. 2 - 2
1 of 2
MMBT4403T
Electrical Characteristics
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 3/4 3/4 30 60 100 100 20 3/4 -0.75 3/4 3/4 3/4 1.5 0.1 60 1.0 200 Max 3/4 3/4 3/4 -100 -100 3/4 3/4 3/4 300 3/4 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 3/4 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
td tr ts tf
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
Ordering Information (Note 3)
Device MMBT4403T-7 Note: Packaging SOT-523 Shipping 3000/Tape & Reel
2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
2TYM
Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 March 3 2003 P Apr 4
2004 R May 5 Jun 6
2005 S Jul 7
2006 T Aug 8 Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30273 Rev. 2 - 2
2 of 2
MMBT4403T

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